Voltage detecting circuit and method for measuring characteristic of transistor

ABSTRACT

A voltage detection circuit includes: a transistor; a switch coupled to a drain terminal of the transistor; the drain terminal is coupled to an one end of the switch; a first driver that controls the switch in synchronization with a second driver that drives a gate terminal of the transistor; and a plurality of resistors coupled in series and coupled to an another end of the switch.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2012-256687, filed on Nov. 22,2012, the entire contents of which are incorporated herein by reference.

FIELD

The embodiments discussed herein are related to a voltage detectingcircuit for a power transistor and a method for measuring acharacteristic of a power transistor.

BACKGROUND

In recent years, as the development of power transistors has proceeded,efforts have been made to increase the performance of high-voltagesemiconductor switching elements, such as a field-effect transistor(FET), an insulated gate bipolar transistor (IGBT), a high electronmobility transistor (HEMT) using a gallium nitride (GaN) layer as anelectron transit layer, and so forth.

In a power transistor which is used for a switching power supply source,specifically, reducing a loss is an important challenge, and anon-resistance is used as an operation performance index for powertransistors.

However, many of recent power transistors perform high-speed operation,and merely using an on-resistance calculated using DC characteristics isnot enough as a performance index.

Thus, as an effective performance index used when a switching operationof a power transistor is performed, a dynamic on-resistance Ron ismeasured.

Referring to FIG. 1, in order to calculate the dynamic on-resistanceRon, a pulse voltage is input to a gate terminal of a power transistor,and calculation is performed, on the basis of an on-current Ids_on andan on-voltage Vds_on flowing in a drain at that time, using the dynamicon-resistance Ron=Vds_on/Ids_on.

FIGS. 2A-2D are charts illustrating waveforms obtained by calculatingthe switching loss and the dynamic on-resistance Ron from a drainvoltage and a drain current when switching of the gate of a powertransistor is performed.

In general, where the magnitude of the dynamic on-resistance Ron of apower transistor is dependent on a voltage (an off voltage Vds_off)which is applied when the power transistor is in an off state in manycases. A reason for this is that temperature that the transistor feelsvaries due to Joule heat generated by a switching loss caused by overlapof the waveform of a drain-source voltage Vds and the waveform of adrain-source current Ids with each other when switching from an offstate to an on state or switching from an on state to an off state isperformed and a conduction loss caused by Vds_on and Ids_on.

It is also known that, in a power transistor using a chemicalsemiconductor, current and voltage waveforms are dependent on Vds_offbecause of the electron and hole trapping level at which electrons andholes existing at a semiconductor surface and an interface are trapped.

The following is reference document:

[Document 1] Japanese Laid-open Patent Publication No. 2008-309702.

SUMMARY

According to an aspect of the invention, a voltage detection circuitincludes: a transistor; a switch coupled to a drain terminal of thetransistor; the drain terminal is coupled to an one end of the switch; afirst driver that controls the switch in synchronization with a seconddriver that drives a gate terminal of the transistor; and a plurality ofresistors coupled in series and coupled to an another end of the switch.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a chart illustrating a dynamic on-resistance;

FIGS. 2A-2D are charts illustrating dynamic waveforms of a powertransistor;

FIG. 3 is a diagram illustrating configurations of a measurement circuitand a measurement device used for measuring the dynamic on-resistance ofa power transistor;

FIG. 4 is an equivalent circuit diagram of a probe including anattenuator therein;

FIGS. 5A-5F are charts illustrating results of simulation ofcharacteristics of a power transistor;

FIG. 6 is a diagram illustrating the principles of the presentdisclosure;

FIG. 7 is a circuit diagram of a voltage detection circuit according toa first embodiment;

FIG. 8 is a circuit diagram of a voltage detection circuit according toa second embodiment;

FIG. 9 is a circuit diagram of a voltage detection circuit according toa third embodiment;

FIGS. 10A-10F are charts illustrating results of simulation of a casewhere characteristics of a power transistor are measured using thevoltage detection circuit of the second embodiment; and

FIG. 11 is a chart illustrating fabrication process steps of fabricatinga semiconductor transistor or an integrated circuit, to which ameasurement method according to an embodiment is introduced.

DESCRIPTION OF EMBODIMENTS

FIG. 3 is a diagram illustrating configurations of a measurement circuitand a measurement device used for measuring the dynamic on-resistanceRon of a power transistor.

When the dynamic on-resistance Ron is measured, switching of a gate of atarget measurement transistor is performed, thereby measuring a voltagewaveform in which a voltage (an off-voltage) of several hundreds voltapplied between drain and source terminals during an off-time Toff and avoltage (an on-voltage) of several millivolt during an on-time Ton aretemporally repeated at a frequency (=1/(Ton+Toff)) of 100 kHz to severalMHz.

Normally, a drain-source voltage of a target measurement transistorusing an oscilloscope and a probe including an attenuator, and at thesame time, a drain-source current is measured by a current probe.

The setting of a detector gain (a range) of an input terminal of theoscilloscope is in general determined by a higher one (an off-voltage)of voltages which are input.

When a voltage to be measured exceeds an allowable voltage of the inputterminal of the oscilloscope, a method in which a voltage that is inputto the input terminal of the oscilloscope is further reduced using theprobe including the attenuator therein is used.

FIG. 4 is an equivalent circuit diagram of a probe including anattenuator therein.

It is known that, when a voltage waveform is measured by anoscilloscope, a time constant (τp=Cp×Rp) obtained on the basis of anattenuation resistance Rp and a capacitance Cp of the attenuator and atime constant (τsc=Csc×Rsc) obtained on the basis of a resistance Rscand a capacitance Csc of the input terminal of the oscilloscope arecompletely matched, and thereby, a waveform observed on the oscilloscopeand a waveform of a voltage detected at the end of the probe aretheoretically the same.

However, actually, the time constant τp and the time constant τsc arenot completely matched because of a parasitic capacitance, a resistance,an inductance, and so forth, which exist in the probe and the inputterminal of the oscilloscope. Specifically, the shorter an on-operationtime of a transistor is, the less the degree of matching of the timeconstants becomes. Also, in a long-time measurement, the values of theattenuation resistance Rp, the capacitance Cp, the resistance Rsc, andthe capacitance Csc vary due to change in temperature of a measurementenvironment to cause a difference between the adjusted time constant τpand the adjusted time constant τsc, and thus, correct measurement is notperformed.

Then, the difference between the time constants results in a distortionof a voltage response waveform observed on the oscilloscope. That is, aproblem arises in which a low voltage (an on-voltage) is not correctlymeasured because of an allowable margin of error caused by an inputrange setting for the oscilloscope and the attenuator.

FIGS. 5A-5F are charts illustrating results of simulation of a casewhere characteristics of a power transistor are measured by a probeincluding an attenuator by a calculator in the manner illustrated inFIG. 3.

Specifically, a pulse transmitted from a pulse signal source is input tothe gate of the target measurement transistor, response waveforms ofresistance values obtained by dividing a drain voltage, a drain current,a gate voltage, and a drain-source voltage which correspond to the pulseby a drain current are simulated.

FIG. 5A illustrates a waveform which indicates a value obtained bydividing the drain-source voltage Vds by the drain current Ids andrepresents an on-resistance in an on-state. FIG. 5B illustrates a pulseresponse waveform of the drain voltage, FIG. 5C illustrates a responsewaveform of the drain current, and FIG. 5D illustrates a waveform of anoutput from a gate driver.

FIG. 5E illustrates an enlarged part of the waveform of FIG. 5A, andFIG. 5F illustrates an enlarged part of the waveform of FIG. 5B. Thevoltages V (drain) and V (probe) illustrated in FIG. 5F are as follows.

V (drain): a potential of the drain terminal of the target measurementtransistor in the measurement circuit of FIG. 3. V (probe): a potentialin the probe terminal of the probe equivalent circuit of FIG. 4.

As illustrated in FIGS. 5A-5F, when the power transistor is switchedfrom off to on, undershoot of the waveform of the drain-source voltageoccurs. Then, the value of the on-voltage becomes 0 V or lower, and theon-resistance is not correctly determined.

Even when the voltage that is input to the imputer terminal of theoscilloscope is within an allowable range, if the value of the voltagegreatly exceeds a display range, an amplifier installed in an inputstage of the oscilloscope causes saturation and a distortion, numericalvalues displayed on a screen includes a large margin of error, and thus,the evaluation might not be correctly performed.

There is a technique in which a circuit that forcibly clamps a voltage,when an off-voltage is applied, is provided so that an input voltage tothe oscilloscope is kept to be less than the allowable voltage of theinput terminal of the oscilloscope. However, in this technique, acorrect off-voltage is not applied to the power transistor and only aninput allowable voltage of the oscilloscope is applied, or the inputrange of the oscilloscope is not appropriately set for a minimum voltagethat is input, and therefore, the off-voltage dependency of the dynamicon-resistance is not correctly evaluated.

FIG. 6 is a diagram illustrating the principles of the presentdisclosure. A drain terminal 16 of a target measurement transistor 3 isconnected to one terminal of a load 2 and a source terminal 18 thereofis grounded. The other terminal of the load 2 is connected to a powersupply source 1. A gate terminal 17 of the target measurement transistor3 is connected to one terminal of an oscillation reducing gate resistorR4 and the other terminal of the oscillation reducing gate resistor R4is connected to an output terminal of a gate driver 5 that drives thetarget measurement transistor 3. Then, an output terminal of a pulsegenerator 6 that controls the gate driver 5 is connected to an inputterminal of the gate driver 5 that drives the target measurementtransistor 3.

A connection node of the drain terminal 16 of the target measurementtransistor 3 and the load 2 is connected to one terminal of a switch 8,and the other terminal of the switch 8 is connected to one terminal of avoltage dividing resistor R2. The other terminal of the voltage dividingresistor R2 is connected to one terminal of a voltage dividing resistorR1 and an input of an oscilloscope, and the other terminal of thevoltage dividing resistor R1 is grounded.

Opening and closing of the switch 8 is controlled by a gate driver 10,and an output terminal of a pulse generator 11 that controls the gatedriver 10 is connected to an input terminal of the gate driver 10. Thepulse generator 11 generates a pulse in synchronization with a pulsegenerated by the pulse generator 6 that controls the gate driver 5 thatdrives the target measurement transistor 3, and supplies the synchronouspulse to the input terminal of the gate driver 10 that opens and closesthe switch 8. That is, the switch 8 is opened and closed insynchronization with the target measurement transistor 3. A voltage ofdrain voltage×R1/(R1+R2) obtained by dividing the drain voltage of thetarget measurement transistor 3 by the voltage dividing resistors R1 andR2 is input to the oscilloscope only in a period in which the switch 8is on.

Concurrently, a drain current Ids flowing at the source side of thetarget measurement transistor 3 is measured by a current probe 30, andthus, a dynamic on-resistance Ron may be obtained from the drain currentDrain current Ids and the drain voltage.

When only an on-voltage time (Ton) of the drain voltage of the targetmeasurement transistor 3 is measured by the oscilloscope, thesensitivity of the input range of the oscilloscope is increased, andfurthermore, a probe including an attenuator therein is not used. Thus,the on-voltage is measured with high accuracy. Moreover, measurement isperformed after a preferable off-voltage is applied to the powertransistor, and thus, the off-voltage dependency of the dynamicon-resistance is correctly evaluated.

FIG. 7 is a circuit diagram of a voltage detection circuit according toa first embodiment, which is a specific example of the principles ofpresent disclosure. As the target measurement transistor 3, for example,a power transistor for power application, that is, a field effecttransistor, a MOS transistor, a bipolar transistor, a GaN-HEMT, acomposite type transistor of the foregoing transistors, or an integratedcircuit having the same function as that of such a transistor may beused. The drain terminal 16 of the target measurement transistor 3 isconnected to a connection line 24 to which the power supply source 1, acapacitor 15, and the load 2, and the source terminal 18 is grounded.The gate terminal 17 is connected to the one terminal of the gateresistor R4 and the other terminal of the gate resistor R4 is connectedto the output terminal of the gate driver 5 that drives the targetmeasurement transistor 3.

As the gate driver 5 that drives the target measurement transistor 3,for example, a transistor having a configuration of a complementarytransistor or a configuration of a single single-end transistor in anoutput stage may be used, and the transistor may be a field-effecttransistor, a MOS transistor, a bipolar transistor, a composite typetransistor of the foregoing transistors, or an integrated circuit havingthe same function as that of such a transistor.

An output terminal of the pulse generator 6 that controls the gatedriver 5 is connected to the input terminal of the gate driver 5 thatdrives the target measurement transistor 3. If an output voltage of thepulse generator 6 has a voltage value which turns the target measurementtransistor 3 on and off, a configuration which does not include the gatedriver 5 may be employed. Also, a resistor that stabilizes the output ofthe gate driver 5 may be provided between the pulse generator 6 and thegate driver 5.

As a switch transistor 8A, for example, a transistor having a breakdownvoltage equal to or higher than the breakdown voltage of a small powertransistor or the target measurement transistor 3, and having anon-resistance sufficiently smaller than the total resistance of thevoltage dividing resistor R1 and the voltage dividing resistor R2 isused, and the transistor may be a field-effect transistor, a bipolartransistor, or the like. A drain terminal 19 of the switch transistor 8Aand the drain terminal 16 of the target measurement transistor 3 areline-connected by a connection line 22. A source terminal 21 of theswitch transistor 8A is connected to one terminal of the voltagedividing resistor R2. The other terminal of the voltage dividingresistor R2 is connected to one terminal of the voltage dividingresistor R1, and furthermore, the other terminal of the voltage dividingresistor R1 is grounded.

One terminal of a gate resistor R9 is connected to a gate terminal 20 ofthe switch transistor 8A, and the other terminal of the gate resistor R9is connected to an output terminal of a gate driver 10A that drives theswitch transistor 8A. The gate driver 10A that drives the switchtransistor 8A includes a control terminal and is connected to a sourceterminal 21 of the switch transistor 8A via a connection line 23.

In this case, as the gate driver 10A that drives the switch transistor8A, for example, a driver having a function of shifting the level of thepotential of an output terminal connected to the gate terminal 20 of theswitch transistor 8A by an amount corresponding to a potential of thesource terminal 21 of the switch transistor 8A and having a function ofadding to the gate terminal 20 a potential difference used for turningon the switch transistor 8A to the potential of the source terminal 21may be used. By this connection, even when the potential of the sourceterminal 21 of the switch transistor 8A is not 0, an output pulse of thegate driver 10A is applied correctly between the gate terminal 20 andthe source terminal 21 of the switch transistor 8A.

The output terminal of the pulse generator 11 that drives the gatedriver 10A is connected to an input terminal of the gate driver 10A thatdrives the switch transistor 8A. Furthermore, the pulse generator 11 isconnected to the pulse generator 6 that controls the gate driver 5 thatdrives the target measurement transistor 3 via a synchronization wiring7, and the pulse generator 11 and the pulse generator 6 generate a pulseat the same timing.

The input terminal of the oscilloscope is connected to a voltagedividing terminal 25 between the voltage dividing resistor R2 and thevoltage dividing resistor R1. In this case, if the values of the voltagedividing resistor R1 and the voltage dividing resistor R2 are set, forexample, such that the value of the voltage dividing resistor R1=50Ω andthe value of the voltage dividing resistor R2=450Ω, the potential of thevoltage dividing terminal 25 is 1/10 of the drain voltage of the targetmeasurement transistor 3, and thus, the voltage measurement range forthe input terminal of the oscilloscope may be increased tenfold.

In this embodiment, the drain voltage of the target measurementtransistor 3 is measured by the oscilloscope only during a period inwhich the target measurement transistor 3 is on, and therefore, thesensitivity of the input range of the oscilloscope may be increased.Furthermore, the voltage measurement range for the oscilloscope is notdetermined by the off-voltage but is set by the upper limit of theon-voltage without using a probe including an attenuator therein, andthus, detection accuracy for the on-voltage may be improved. Also, theoff-voltage may be appropriately applied to the target measurementtransistor without clamping the off-voltage, thereby setting the voltagemeasurement range for the oscilloscope and enabling appropriate andaccurate voltage detection of the on-voltage to be performed.

FIG. 8 is a circuit diagram of a voltage detection circuit according toa second embodiment as a specific example of the principles of presentdisclosure. In FIG. 8, an element which is similar to or the same asthat in the voltage detection circuit according to the first embodimentillustrated in FIG. 7 is identified by the same reference character andthe description thereof will be omitted.

In the voltage detection circuit according to the second embodiment,instead of the gate driver 10A that drives the switch transistor 8A ofthe first embodiment, a gate driver 10B having a variable gain functionof changing an output voltage thereof to an arbitrary value is provided.

The gate driver 10B that drives the switch transistor 8A may be a driverthat changes the output voltage by changing the power supply voltagethereof.

Also, in this embodiment, the drain voltage of the target measurementtransistor 3 may be measured by the oscilloscope only in a period inwhich the target measurement transistor 3 is on, and therefore, thesensitivity of the input range of the oscilloscope may be increased.Moreover, a probe including an attenuator therein is not used, andtherefore, the on-voltage may be measured with high accuracy.

FIG. 9 is a circuit diagram of a voltage detection circuit according toa third embodiment as a specific example of the principles of presentdisclosure. In FIG. 9, an element which is similar to or the same asthat in the voltage detection circuit according to the first embodimentillustrated in FIG. 7 is identified by the same reference character andthe description thereof will be omitted.

In the voltage detection circuit according to the third embodiment, theinput terminal of the gate driver 10A that drives the switch transistor8A is connected to the output of the gate driver 5A that drives thetarget measurement transistor 3 via a connection line 7A. As the gatedriver 5A for a target measurement transistor, for example, a transistorhaving a configuration of a complementary transistor or a configurationof a single single-end transistor in an output stage may be used, andthe transistor may be a field-effect transistor, a MOS transistor, abipolar transistor, a composite type transistor of the foregoingtransistors, or an integrated circuit having the same function as thatof such a transistor. With the foregoing configuration, the switchtransistor 8A is turned on and off at the same timing as the timing ofturning on and off the target measurement transistor 3.

As another option, the input terminal of the gate driver 10A that drivesthe switch transistor 8A may be directly connected to the outputterminal of the pulse generator 6 that controls the gate driver 5A via aconnection line. However, in this case, the pulse generator 6 isconfigured to have an output capability that allows the pulse generator6 to control two gate drives, that is, the gate driver 10A and the gatedriver 5A.

Also, in this embodiment, the drain voltage of the target measurementtransistor 3 may be measured by the oscilloscope only in a period inwhich the target measurement transistor 3 is on, and therefore, thesensitivity of the input range of the oscilloscope may be increased.Moreover, a probe including an attenuator therein is not used, andtherefore, the on-voltage may be measured with high accuracy.

FIGS. 10A-10F are charts illustrating results of simulation of a casewhere characteristics of a power transistor are measured using thevoltage detection circuit of the second embodiment.

A pulse is input to the gate of the target measurement transistor 3,response waveforms of a resistance value obtained by dividing a drainvoltage, a drain current, a gate voltage, and a drain-source voltagewhich correspond to the pulse by a drain current are simulated.

FIG. 10A illustrates a waveform which indicates a value obtained bydividing the drain-source voltage Vds by the drain current Ids andrepresents an on-resistance in an on-state. FIG. 10B illustrates a pulseresponse waveform of the drain voltage, FIG. 10C illustrates a responsewaveform of the drain current, and FIG. 10D illustrates a waveform of anoutput from a gate driver 10B.

FIG. 10E illustrates an enlarged part of the waveform of FIG. 10A, andFIG. 10F illustrates an enlarged part of the waveform of FIG. 10B. Thevoltage values V (drain), V (probe), and V (bnc) illustrated in FIG. 10Fare as follows.

V (drain): a potential of the drain terminal of the target measurementtransistor in the measurement circuit of FIG. 3. V (probe): a potentialin the probe terminal of the probe equivalent circuit of FIG. 4. V(bnc): a potential of the voltage dividing terminal 25 of FIG. 8.

It is understood from the waveform of FIG. 10F that V (drain) is acorrect value, and the result for the V (bnc) matches that of V (drain).On the other hand, V (probe) represents a negative value, and it isunderstood that a clearly different result was obtained. In the voltagedetection circuit according to the second embodiment, the voltage in anon-state matches the value of V (drain), and the voltage in an off-stateis maintained at 10 V or less. Thus, the input voltage to theoscilloscope is 1/40 or less of an actual voltage, and therefore, theinput sensitivity of the oscilloscope may be increased a least aboutfortyfold.

Finally, process steps from fabrication of a semiconductor transistor oran integrated circuit (IC) to production shipment, to which ameasurement method according to this embodiment is introduced, will bedescribed with reference to FIG. 11.

First, Step S1 illustrates the process of fabricating a transistor or anIC and, in Step S1, an electrical connection is provided to asemiconductor wafer in which a transistor structure or an integratedcircuit structure is formed for a test. In this stage, a needle or aprobe which provides a voltage or a current is brought into contact toan electrode that is an electrical interface of a transistor or an IC tomeasure static and dynamic response characteristics that appear when avoltage or a current is applied thereto. A device whose static anddynamic response characteristics that fall short of a standard due to amanufacturing failure, etc., is selected (a first selection).

Next, in Step S2, an evaluation of a switching characteristic to which avoltage detection circuit according to the present disclosure isperformed to appropriately select a transistor or an IC that does notperform a preferable operation (a second selection). By the first andsecond selections, a packaging operation in a subsequent packaging stepmay be excluded.

Subsequently, in Step S3, the transistor or the IC in a wafer state iscut into individual chips (elements) by dicing or the like.

Next, in Step S4, only a chip other than a chip including the transistoror the IC determined as a defect in Steps S1 and S2 is selected, resinsealing is performed, and an external connection terminal is formed,thereby performing packaging.

Then, in Step S5, the evaluation of a switching characteristic to whichthe voltage detection circuit according to the present disclosure isintroduced is performed again to the packaged transistor or IC, and itsdynamic response characteristic is evaluated to perform final selection(a third selection).

In Step S6, only a packaged transistor or IC which has passed in theselection in Step S5 is shipped out as a product.

All examples and conditional language recited herein are intended forpedagogical purposes to aid the reader in understanding the inventionand the concepts contributed by the inventor to furthering the art, andare to be construed as being without limitation to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although the embodiments of the presentinvention have been described in detail, it should be understood thatthe various changes, substitutions, and alterations could be made heretowithout departing from the spirit and scope of the invention.

What is claimed is:
 1. A voltage detection circuit, comprising: atransistor; a switch coupled to the transistor, wherein a first terminalof the switch is coupled to a drain terminal of the transistor; a firstdriver that controls the switch in synchronization with a second driverthat drives a gate terminal of the transistor; and a first resistor anda second resistor, a first end of the first resistor is coupled inseries to a first end of the second resistor, wherein a second end ofthe second resistor is coupled to a second terminal of the switch thatis opposite to the first terminal, wherein a second end of the firstresistor is grounded, wherein the second end of the second resistor iselectrically coupled to the drain terminal of the transistor when theswitch is on, and wherein the second end of the second resistor iselectrically insulated from the drain terminal of the transistor whenthe switch is off.
 2. The voltage detection circuit according to claim1, wherein the transistor is a field-effect transistor, a MOStransistor, a bipolar transistor, a GaN-HEMT, or a composite type of thefield-effect transistor, the MOS transistor, the bipolar transistor, andthe GaN-HEMT transistors.
 3. The voltage detection circuit according toclaim 2, wherein the switch is a field-effect or bipolar transistor andhas a breakdown voltage equal to or higher than a break down voltage ofthe transistor.
 4. A method for measuring a characteristic of atransistor, comprising: arranging a switch, a first driver, a seconddriver, a first resistor and a second resistor in the periphery of thetransistor, the switch is coupled to the transistor, a first terminal ofthe switch is coupled to a drain terminal of the transistor, the firstdriver controls the switch in synchronization with the second driverthat drives a gate terminal of the transistor, a first end of the firstresistor is coupled in series to a first end of the second resistor, asecond end of the second resistor is coupled to a second terminal of theswitch that is opposite to the first terminal, and a second end of thefirst resistor is grounded; simultaneously turning on and off the firstdriver and the second driver; calculating a drain voltage of thetransistor by measuring a voltage of a connection point of the firstresistor and the second resistor; measuring an on-current of thetransistor simultaneously with the voltage of the connection point ofthe first resistor and the second resistor; and calculating anon-resistance of the transistor based on the on-current and the voltageof the connection point of the first resistor and the second resistor,wherein the second end of the second resistor is electrically coupled tothe drain terminal of the transistor when the switch is on, and whereinthe second end of the second resistor is electrically insulated from thedrain terminal of the transistor when the switch is off.
 5. The methodaccording to claim 4, wherein the connection point of the first resistorand the second resistor is directly coupled to an input of anoscilloscope.